Heat resistance of EUV multilayer mirrors for long-time applications

被引：27

作者：

Feigl, T

Lauth, H

Yulin, S

Kaiser, N

机构：

[1] Fraunhofer Inst Angew Opt & Feinmech, D-07745 Jena, Germany

[2] Jenopt Laser Opt Syst GmbH, D-07739 Jena, Germany

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

Mo/Si; Mo2C/Si; Mo/Mo2C/Si/Mo2C; multilayers; sputtering; thermal stability; EUVL;

D O I：

10.1016/S0167-9317(01)00530-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of elevated temperature on the structural Stability of Mo/Si Mo2C/Si and Mo/Mo2C/Si/Mo2C (d(Mo2C) = 0.6 nm) multilayers was investigated. The multilayers deposited by dc magnetron sputtering are annealed at temperatures ranging from 200 to 700 degreesC. The multilayer mirrors were designed for normal incidence reflectivity at about 13 mn wavelength. We achieved maximal normal incidence reflectivities of 68.4% at 12.8 nm wavelength for Mo/Si and 66.8% at 12.8 nm for Mo2C/Si. While the reflectivity of Mo/Si multilayers decreased considerably after annealing above 300 degreesC the Mo2C/Si multilayers; showed a superior thermal stability up to 500 degreesC. (C) 2001 Elsevier Science BY All rights reserved.

引用

页码：3 / 8

页数：6

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