AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

被引：37

作者：

Micovic, M ^{[1
]}

Kurdoghlian, A ^{[1
]}

Janke, P ^{[1
]}

Hashimoto, P ^{[1
]}

Wong, DWS ^{[1
]}

Moon, JS ^{[1
]}

McCray, L ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期

关键词：

GaN; MODFET power amplifiers;

D O I：

10.1109/16.906456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we demonstrate state of the art performance of GaN HFETs grown on SiC by rf Nitrogen plasma assisted molecular beam epitaxy (MBE) at 10 and 20 GHz and good power scalability of these devices at 10 GHz. A single stage power amplifier built bg power combining four of our I mm devices exhibits continuous wave output power of 22.9 W with associated power added efficiency (PAE) of 37% at 9 GHz. This is to the best of our knowledge the highest CW power and the best combination of power and PAE demonstrated to date for a GaN based microwave integrated circuit at this frequency.

引用

页码：591 / 596

页数：6

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