p-type doping of CdTe with a nitrogen plasma source

被引：18

作者：

Oehling, S

Lugauer, HJ

Schmitt, M

Heinke, H

Zehnder, U

Waag, A

Becker, CR

Landwehr, G

机构：

[1] t Würzburg, 97074 Würzburg, Am Hubland

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.361160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here on the growth and the characterization of p-type CdTe grown by molecular beam epitaxy on (001) Cd0.96Zn0.04Te substrates. Nitrogen has been used as a dopant, which is activated in an electron cyclotron resonance plasma source. The carrier concentration was determined using a CN profiler. Nitrogen has been successfully incorporated substitutionally and hole densities up to 2.6 X 10(17) cm(-3) have been achieved. In addition we present data from x-ray diffraction and photoluminescence, which demonstrate the effect of self-compensation on the nitrogen-doped CdTe layers. (C) 1996 American Institute of Physics.

引用

页码：2343 / 2346

页数：4

共 20 条

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