ARSENIC-DOPED CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：54

作者：

HARPER, RL

HWANG, S

GILES, NC

SCHETZINA, JF

DREIFUS, DL

MYERS, TH

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

[2] GE,ELECTR LAB,SYRACUSE,NY 13221

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.101219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：170 / 172

页数：3

共 18 条

[1] SURFACE NUCLEATION KINETICS OF MOLECULAR-BEAM EPITAXIAL DOPED (001) AND (111) CDTE
BENSON, JD
SUMMERS, CJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 354 - 361
[2] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
GILES, NC
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1095 - 1097
[3] CONTROLLED SUBSTITUTIONAL DOPING OF CDTE THIN-FILMS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
GILES, NC
SCHETZINA, JF
HITZMAN, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3059 - 3063
[4] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
BICKNELL, RN
GILES, NC
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1735 - 1737
[5] CDTE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
DREIFUS, DL
KOLBAS, RM
HARRIS, KA
BICKNELL, RN
HARPER, RL
SCHETZINA, JF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 931 - 933
[6] ARSENIC-DOPED P-CDTE LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
GHANDHI, SK
TASKAR, NR
BHAT, IB
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 900 - 902
[7] PROPERTIES OF DOPED II-VI FILMS AND SUPERLATTICES GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
GILES, NC
BICKNELL, RN
HARPER, RL
HWANG, S
HARRIS, KA
SCHETZINA, JF
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 348 - 353
[8] OHMIC CONTACT AND IMPURITY CONDUCTION IN P-DOPED CDTE
GU, J
KITAHARA, T
KAWAKAMI, K
SAKAGUCHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1184 - 1185
[9] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS
HALSTED, RE
AVEN, M
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (03) : 64 - &
[10] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON
HAYNES, JR
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

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