Ambipolar organic thin-film transistors using C60/pentacene structure:: Characterization of electronic structure and device property -: art. no. 233502

被引:27
作者
Kang, SJ
Yi, Y
Kim, CY
Cho, K
Seo, JH
Noh, M
Jeong, K
Yoo, KH
Whang, CN
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Techr Oled Co, World Meridian Venture Court, Seoul 153781, South Korea
[3] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2138810
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated ambipolar organic thin-film transistors (OTFTs) using C-60 and pentacene. The electronic structure of the interface was investigated by using ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy. The magnitude of the interface dipole and the band bendings at the interface was determined, and the complete energy level diagram for C-60 on pentacene (C-60/pentacene) was obtained. The lowered band offsets, due to the enhanced charge redistribution in C-60/pentacene relative to pentacene on C-60, are favorable for the ambipolar OTFTs. The measured field-effect mobilities were 0.017 cm(2)/V s and 0.007 cm(2)/V s for the p-channel and the n-channel operations, respectively. The threshold voltages were -2 V for the p channel and 15.6 V for the n channel, comparable to those of unipolar OTFTs using C-60 or pentacene. (c) 2005 Americian Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 20 条
[1]  
[Anonymous], UNPUB
[2]   C60 thin-film transistors with low work-function metal electrodes [J].
Chikamatsu, M ;
Nagamatsu, S ;
Taima, T ;
Yoshida, Y ;
Sakai, N ;
Yokokawa, H ;
Saito, K ;
Yase, K .
APPLIED PHYSICS LETTERS, 2004, 85 (12) :2396-2398
[3]   Organic thin-film transistors: A review of recent advances [J].
Dimitrakopoulos, CD ;
Mascaro, DJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (01) :11-27
[4]   Organic field-effect bipolar transistors [J].
Dodabalapur, A ;
Katz, HE ;
Torsi, L ;
Haddon, RC .
APPLIED PHYSICS LETTERS, 1996, 68 (08) :1108-1110
[5]   Pentacene organic thin-film transistors - Molecular ordering and mobility [J].
Gundlach, DJ ;
Lin, YY ;
Jackson, TN ;
Nelson, SF ;
Schlom, DG .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (03) :87-89
[6]   Energy-level alignment at interfaces between metals and the organic semiconductor 4,4′-N,N′-dicarbazolyl-biphenyl [J].
Hill, IG ;
Rajagopal, A ;
Kahn, A .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3236-3241
[7]  
Ishii H, 1999, ADV MATER, V11, P605, DOI 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO
[8]  
2-Q
[9]   C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition [J].
Kobayashi, S. ;
Takenobu, T. ;
Mori, S. ;
Fujiwara, A. ;
Iwasa, Y. .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2003, 4 (04) :371-375
[10]   Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene [J].
Kuwahara, E ;
Kubozono, Y ;
Hosokawa, T ;
Nagano, T ;
Masunari, K ;
Fujiwara, A .
APPLIED PHYSICS LETTERS, 2004, 85 (20) :4765-4767