Pressure-induced structures of Si-doped HfO2

被引：8

作者：

Fancher, Chris M. ^{[1
]}

Zhao, Lili ^{[1
,2
]}

Nelson, Matthew ^{[1
]}

Bai, Ligang ^{[3
]}

Shen, Guoyin ^{[3
]}

Jones, Jacob L. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Northwest Univ, Sch Informat Sci & Technol, Xian 710127, Peoples R China

[3] Carnegie Inst Sci, HPCAT, Geophys Lab, Argonne, IL 60439 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 23期

关键词：

ORTHORHOMBIC ZIRCONIA; INDUCED AMORPHIZATION; ZRO2;

D O I：

10.1063/1.4922717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrostatic pressure on the structure of Si-doped HfO2 (Si:HfO2) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO2 with 3, 5, and 9 at.% Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar (Pbca) and polar (Pca2(1)) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca2(1) structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported. (C) 2015 AIP Publishing LLC.

引用

页数：5

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