Pathways towards ferroelectricity in hafnia

被引:386
作者
Huan, Tran Doan [1 ]
Sharma, Vinit
Rossetti, George A., Jr.
Ramprasad, Rampi
机构
[1] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
关键词
VOLUME CHANGES; HIGH-PRESSURE; PHASE; POLARIZATION; ZIRCONIA; SEARCH; HFO2; ZRO2;
D O I
10.1103/PhysRevB.90.064111
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The question of whether one can systematically identify (previously unknown) ferroelectric phases of a given material is addressed, taking hafnia (HfO2) as an example. Low free energy phases at various pressures and temperatures are identified using a first-principles based structure search algorithm. Ferroelectric phases are then recognized by exploiting group theoretical principles for the symmetry-allowed displacive transitions between nonpolar and polar phases. Two orthorhombic polar phases occurring in space groups Pca2(1) and Pmn2(1) are singled out as the most viable ferroelectric phases of hafnia, as they display low free energies (relative to known nonpolar phases), and substantial switchable spontaneous electric polarization. These results provide an explanation for the recently observed surprising ferroelectric behavior of hafnia, and reveal pathways for stabilizing ferroelectric phases of hafnia as well as other compounds.
引用
收藏
页数:5
相关论文
共 47 条
[1]   Phase diagram up to 105 GPa and mechanical strength of HfO2 [J].
Al-Khatatbeh, Yahya ;
Lee, Kanani K. M. ;
Kiefer, Boris .
PHYSICAL REVIEW B, 2010, 82 (14)
[2]   Novel Structural Motifs in Low Energy Phases of LiAlH4 [J].
Amsler, Maximilian ;
Flores-Livas, Jose A. ;
Tran Doan Huan ;
Botti, Silvana ;
Marques, Miguel A. L. ;
Goedecker, Stefan .
PHYSICAL REVIEW LETTERS, 2012, 108 (20)
[3]   Crystal structure prediction using the minima hopping method [J].
Amsler, Maximilian ;
Goedecker, Stefan .
JOURNAL OF CHEMICAL PHYSICS, 2010, 133 (22)
[4]  
[Anonymous], 2011, MODERN METHODS CRYST
[5]  
BALDWIN A, UNPUB
[6]   Phase transitions in ferroelectric silicon doped hafnium oxide [J].
Boescke, T. S. ;
Teichert, St. ;
Braeuhaus, D. ;
Mueller, J. ;
Schroeder, U. ;
Boettger, U. ;
Mikolajick, T. .
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[7]   Ferroelectricity in hafnium oxide thin films [J].
Boescke, T. S. ;
Mueller, J. ;
Braeuhaus, D. ;
Schroeder, U. ;
Boettger, U. .
APPLIED PHYSICS LETTERS, 2011, 99 (10)
[8]  
Boscke T., 2011, 2011 International electron devices meeting, P24, DOI [DOI 10.1109/IEDM.2011.6131606, 10.1109/IEDM.2011.6131606]
[9]   Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight [J].
Clima, S. ;
Wouters, D. J. ;
Adelmann, C. ;
Schenk, T. ;
Schroeder, U. ;
Jurczak, M. ;
Pourtois, G. .
APPLIED PHYSICS LETTERS, 2014, 104 (09)