Size distribution of end-of-range dislocation loops in silicon-implanted silicon

被引：19

作者：

Pan, GZ ^{[1
]}

Tu, KN ^{[1
]}

Prussin, S ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90095

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.115895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 10(16) Si/cm(2) and annealed at 750 degrees C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process, An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. (C) 1996 American Institute of Physics.

引用

页码：1654 / 1656

页数：3

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