SOME ASPECTS OF DAMAGE ANNEALING IN ION-IMPLANTED SILICON - DISCUSSION IN TERMS OF DOPANT ANOMALOUS DIFFUSION

被引：66

作者：

SERVIDORI, M

SOUREK, Z

SOLMI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1723 / 1728

页数：6

共 18 条

[1]

ANGELUCCI R, IN PRESS J ELECTROCH

[2]

ANGELUCCI R, IN PRESS BEAM SOLID

[3] STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPLANTED IN PREAMORPHIZED SILICON LAYERS [J].

CEMBALI, F ;

SERVIDORI, M ;

SOLMI, S ;

SOUREK, Z ;

WINTER, U ;

ZAUMSEIL, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (02) :511-516

[4] CHARACTERIZATION OF LATTICE DAMAGE IN ION-IMPLANTED SILICON - MONTE-CARLO SIMULATION COMBINED WITH DOUBLE CRYSTAL X-RAY-DIFFRACTION [J].

CEMBALI, F ;

MAZZONE, AM ;

SERVIDORI, M .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (02) :K125-K127

[5] DOUBLE-CRYSTAL X-RAY-DIFFRACTION ANALYSIS OF LOW-TEMPERATURE ION-IMPLANTED SILICON [J].

CEMBALI, F ;

SERVIDORI, M ;

ZANI, A .

SOLID-STATE ELECTRONICS, 1985, 28 (09) :933-&

[6] THEORY OF DIFFUSE X-RAY-SCATTERING AND ITS APPLICATION TO STUDY OF POINT-DEFECTS AND THEIR CLUSTERS [J].

DEDERICHS, PH .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :471-496

[7] INVESTIGATION OF INTERSTITIALS IN ELECTRON-IRRADIATED ALUMINUM BY DIFFUSE-X-RAY SCATTERING EXPERIMENTS [J].

EHRHART, P ;

SCHILLING, W .

PHYSICAL REVIEW B, 1973, 8 (06) :2604-2621

[8]

FAHEY P, 1986, SEMICONDUCTOR SILICO, P571

[9] DISPLACEMENT AND RECOIL IN ION-IMPLANTED SILICON [J].

MEDA, L ;

CEROFOLINI, GF ;

OTTAVIANI, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :454-456

[10]

MICHEL AE, 1986, RAPID THERMAL PROCES, V52, P3

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