Current-voltage characteristics of a graphene-nanoribbon field-effect transistor

被引：38

作者：

Ryzhii, V. ^{[1
,2
]}

Ryzhii, M. ^{[1
,2
]}

Satou, A. ^{[1
]}

Otsuji, T. ^{[2
,3
]}

机构：

[1] Univ Aizu, Comp Solid State Phys Lab, Aizu Wakamatsu, Fukushima 9658580, Japan

[2] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan

[3] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2917284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an analytical device model for a field-effect transistor based on a heterostructure, which consists of an array of nanoribbons clad between the highly conducting substrate (the back-gate) and the top gate controlling the source-drain current. The equations of the model of a grapheme-nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. By using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back-gate and top-gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics. (C) 2008 American Institute of Physics.

引用

页数：8

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