Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

被引：62

作者：

Stangl, J

Daniel, A

Holy, V

Roch, T

Bauer, G

Kegel, I

Metzger, TH

Wiebach, T

Schmidt, OG

Eberl, K

机构：

[1] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria

[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany

[3] Univ Munich, CeNS, D-80539 Munich, Germany

[4] Humboldt Univ, Inst Phys, AG Rontgenbeugung, D-10117 Berlin, Germany

[5] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.1392975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the dot layer on the sample surface, and at the same time being able to measure in-plane strain and strain in growth direction, we utilized a scattering geometry at grazing incidence angles, but with high exit angles. The measured intensity distribution is compared to simulations based on the strain distribution calculated by a finite element method. Although pure Ge has been deposited during island growth by molecular beam epitaxy, the Ge composition varies from 0.5 at the island base to 1.0 at the top of the islands. Even at this top, the elastic relaxation reaches only about 50%. (C) 2001 American Institute of Physics.

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页码：1474 / 1476

页数：3

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