Direct measurement of strain in a Ge island on Si(001)

被引：36

作者：

Miller, PD

Liu, CP

Henstrom, WL

Gibson, JM

Huang, Y

Zhang, P

Kamins, TI

Basile, DP

Williams, RS

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mech & Ind Engn, Urbana, IL 61801 USA

[3] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a direct measurement of the strain in a single Ge "quantum dot" island grown on Si by chemical vapor deposition. This transmission electron microscopy method is reliable: without the need for detailed modeling of the strain field, it measures the maximum in-plane displacement. Good agreement is found between the experimental value of 0.86+/-0.17% average strain and finite element simulations assuming pure Ge. Thus no evidence of significant alloying with Si is observed. (C) 1999 American Institute of Physics. [S0003-6951(99)01927-0].

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页码：46 / 48

页数：3

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