Thermionic and tunneling transport mechanisms in graphene field-effect transistors

被引：22

作者：

Ryzhii, Victor ^{[1
,3
]}

Ryzhii, Maxim ^{[1
,3
]}

Otsuji, Taiichi ^{[2
,3
]}

机构：

[1] Univ Aizu, Comp Solid State Phys Lab, Aizu Wakamatsu, Fukushima 9658580, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[3] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 07期

关键词：

D O I：

10.1002/pssa.200724035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an analytical device model for a graphene field-effect transistor (GFET) on a highly conducting substrate, playing the role of the back gate, with relatively short top gate which controls the source-drain current The equations of the GFET device model include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulae for the spatial distributions of the electric potential along the channel and for the voltage dependences of the thermionic and tunneling currents. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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收藏

页码：1527 / 1533

页数：7

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