Electronic sputtering of silicon suboxide films by swift heavy ions

被引：21

作者：

Arnoldbik, WM ^{[1
]}

van Emmichoven, PAZ ^{[1
]}

Habraken, FHPM ^{[1
]}

机构：

[1] Univ Utrecht, Fac Phys & Astron, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.94.245504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two regimes are discerned experimentally in the electronic sputtering of silicon suboxide (SiO(x)) films under irradiation with 50 MeV Cu ions. For x < 1 the removal rate is low and increases with x; for 1.5 < x < 2 the removal rate is high and about constant [(1.6-2.0)x10(3) atoms per incoming ion]. The transition occurs at x values where the electronic structure of SiO(x) has a transition. We propose a model, which connects the electronic sputter rate with the SiO(x) electronic structure considering the lifetime of the ion track.

引用

页数：4

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