Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays

被引：23

作者：

Ku, TK ^{[1
]}

Chen, SH ^{[1
]}

Yang, CD ^{[1
]}

She, NJ ^{[1
]}

Wang, CC ^{[1
]}

Chen, CF ^{[1
]}

Hsieh, IJ ^{[1
]}

Cheng, HC ^{[1
]}

机构：

[1] CHUNG HUA POLYTECH INST,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 05期

关键词：

D O I：

10.1109/55.491831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function, Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones, After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.

引用

页码：208 / 210

页数：3

共 14 条

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