First failure predictions for EPROMs of the type flown on the MPTB satellite

被引:16
作者
McNulty, PJ [1 ]
Scheick, LZ
Roth, DR
Davis, MG
Tortora, MRS
机构
[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[2] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA
[3] Greenville Hosp Syst, Dept Med Phys, Greenville, SC 29605 USA
关键词
D O I
10.1109/23.903759
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Extreme value analysis applied to ground test data provides a new method for predicting the first cell to fail in an array of EPROM memory cells exposed to ionizing radiation. Which cell fails first is a function of the dose absorbed by each as well as the cell-to-cell variations in manufacturing with processing variations apparently dominating fluctuations in absorbed dose, The method is applied to the ground controls of UVPROMs flown on MPTB. These procedures can be used to screen devices for flight parts. Power-law dependence between the rate of electrons leaving the floating gate and the absorbed dose is observed, and it may explain the SEU immunity observed in EPROM memory cells flown in space.
引用
收藏
页码:2237 / 2243
页数:7
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