RADIATION RESPONSE OF FLOATING GATE EEPROM MEMORY CELLS

被引：111

作者：

SNYDER, ES ^{[1
]}

MCWHORTER, PJ ^{[1
]}

DELLIN, TA ^{[1
]}

SWEETMAN, JD ^{[1
]}

机构：

[1] SEEQ TECHNOL INC,SAN JOSE,CA 95131

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2131 / 2139

页数：9

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