CHARGE YIELD FOR CO-60 AND 10-KEV X-RAY IRRADIATIONS OF MOS DEVICES

被引：193

作者：

SHANEYFELT, MR

FLEETWOOD, DM

SCHWANK, JR

HUGHES, KL

机构：

[1] Division 2147, Sandia National Laboratories, Albuquerque

[2] L&M Technologies, Albuquerque

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of MOS devices exposed to Co-60 and low-energy (approximately 10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for Co-60 irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E-0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to Co-60 irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to Co-60 irradiations should speed acceptance of x-ray testers as a hardness assurance tool.

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页码：1187 / 1194

页数：8

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