共 19 条
- [1] THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1318 - 1323BENEDETTO, JMBOESCH, HE
- [2] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1461 - 1466BENEDETTO, JMBOESCH, HE
- [3] CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1273 - 1279BOESCH, HETAYLOR, TL
- [4] SATURATION OF THRESHOLD VOLTAGE SHIFT IN MOSFETS AT HIGH TOTAL DOSE[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1191 - 1197BOESCH, HEMCLEAN, FBBENEDETTO, JMMCGARRITY, JMBAILEY, WE
- [5] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368DOZIER, CMBROWN, DBTHROCKMORTON, JLMA, DI
- [6] USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1324 - 1329DOZIER, CMBROWN, DBFREITAG, RKTHROCKMORTON, JL
- [7] AN EVALUATION OF LOW-ENERGY X-RAY AND CO-60 IRRADIATIONS OF MOS-TRANSISTORS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1535 - 1539DOZIER, CMFLEETWOOD, DMBROWN, DBWINOKUR, PS
- [8] ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4369 - 4375FLEETWOOD, DMWINOKUR, PSBEEGLE, RWDRESSENDORFER, PVDRAPER, BL
- [9] EFFECT OF BIAS ON THE RESPONSE OF METAL-OXIDE-SEMICONDUCTOR DEVICES TO LOW-ENERGY X-RAY AND CO-60 IRRADIATION[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1514 - 1516FLEETWOOD, DMWINOKUR, PSDOZIER, CMBROWN, DB