Measurements of dose with individual FAMOS transistors

被引：27

作者：

Scheick, LZ ^{[1
]}

McNulty, PJ

Roth, DR

Davis, MG

Mason, BE

机构：

[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA

[2] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA

[3] Greenville Hosp Syst, Greenville, SC 29605 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 06期

关键词：

D O I：

10.1109/23.819149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is described for measuring the doses absorbed by microstructures from an exposure to ionizing radiation. The decrease in the duration of UltraViolet light (UV) exposure required to erase each cell of a commercial UltraViolet erasable Programmable Read Only Memory (UVPROM) correlates with the dose absorbed by the Boating gate of that transistor. This technique facilitates analysis of the microdose distribution across the array and the occurrence of Single Event Upset-(SEU) like anomalous shifts due to rare large energy-deposition events.

引用

页码：1751 / 1756

页数：6

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