RADIATION DOSIMETER BASED ON FLOATING GATE MOS-TRANSISTOR

被引：23

作者：

KASSABOV, J

NEDEV, N

SMIRNOV, N

机构：

[1] Institute of Solid State Physics, Lenin Blvd. 72

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 116卷 / 1-2期

关键词：

FLOATING GATE MOS TRANSISTOR; RADIATION DOSIMETER; GAMMA-RADIATION;

D O I：

10.1080/10420159108221354

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The influence of γ-ionizing radiation on floating gate (FG) MOS transistor (MOST) having a positively or negatively charged FG has been studied. It is shown that a transistor with negatively charged FG may be used for dosimetry measurements. © 1991, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：155 / 158

页数：4

共 5 条

[1] DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE [J].