7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

被引：92

作者：

Simin, G

Hu, X

Ilinskaya, N

Kumar, A

Koudymov, A

Zhang, J

Khan, MA

Gaska, R

Shur, MS

机构：

[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY USA

[3] Rensselaer Polytech Inst, Troy, NY USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 24期

关键词：

D O I：

10.1049/el:20001401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fast high-power solid-state switch based on a novel large periphery multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1mm periphery and 10 mum gate-drain spacing, 7.5kW/mm(2) of switched power with on-state resistance of 75mW x mm(2) is obtained. The pulse response of the MOSHFET switch exhibited a rise-time < 5ns in pulsemode operation.

引用

页码：2043 / 2044

页数：2

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