Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

被引：54

作者：

Cho, YH ^{[1
]}

Lee, SK

Kwack, HS

Kim, JY

Lim, KS

Kim, HM

Kang, TW

Lee, SN

Seon, MS

Nam, OH

Park, YJ

机构：

[1] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea

[2] Chungbuk Natl Univ, Inst Basic Sci Res, Cheongju 361763, South Korea

[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[4] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1613043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Influence of the size of indium clusters on optical properties of green-light-emitting InGaN quantum wells (QWs) was investigated by photoluminescence (PL), cathodoluminescence, PL excitation, and time-resolved PL techniques. Low luminescence efficiency was observed for green-light-emitting InGaN QWs with micron-sized indium clusters, in contrast to the case of InGaN QWs with submicron-sized small indium segregation. Both the thermal activation energy and the carrier lifetime dramatically decreased, while a large Stokes-like shift between absorption edge and PL peak energy was still observed for the InGaN QWs with micron-sized indium clusters. These facts indicate that the effective potential barrier between radiative and nonradiative channels (thus effective carrier localization) rapidly decreases due to the formation of micron-sized large indium clusters possessing a number of nonradiative centers, leading to significant luminescence degradation. (C) 2003 American Institute of Physics.

引用

页码：2578 / 2580

页数：3

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