Nitride-based blue LEDs with GaN/SiN double buffer layers

被引：24

作者：

Kuo, CH

Chang, SJ

Su, YK

Wang, CK

Wu, LW

Sheu, JK

Wen, TC

Lai, WC

Tsai, JM

Lin, CC

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

[3] Epitaxy Corp, Hsin 744, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 11期

关键词：

SiN; buffer; LED; life time;

D O I：

10.1016/S0038-1101(03)00244-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were prepared by metalorganic chemical vapor deposition. It was found that we could reduce defect density and thus improve crystal quality of the GaN epitaxial layers by using GaN/SiN double buffers. It was also found that we could use such a GaN/SiN double buffer to achieve more reliable nitride-based LEDs. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2019 / 2022

页数：4

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