Combined millimeter-wave near-field microscope and capacitance distance control for the quantitative mapping of sheet resistance of conducting layers

被引:49
作者
Lann, AF [1 ]
Golosovsky, M
Davidov, D
Frenkel, A
机构
[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
[2] MSI Engn Software Ltd, Tel Aviv, Israel
关键词
D O I
10.1063/1.122605
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a dual-frequency electromagnetic scanning probe and apply it for quantitative mapping of the sheet resistance of conducting films. The high-frequency (82 GHz) mode is used for image acquisition, while the low-frequency (5 MHz) mode is used for distance control. We measure magnitude and phase of the near-field microwave reflectivity from conducting films of varying thickness and develop a model which accounts fairly well for our results. This brings us to a quantitative understanding of the contrast in the microwave near-field imaging using an aperture probe, and allows us to achieve quantitative contactless characterization of conducting layers with sheet resistance even below 2 Ohm. (C) 1998 American Institute of Physics. [S0003-6951(98)01345-X].
引用
收藏
页码:2832 / 2834
页数:3
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