A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

被引：33

作者：

Wakejima, A ^{[1
]}

Ota, K ^{[1
]}

Matsunaga, K ^{[1
]}

Kuzuhara, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Photon & Wireless Devices Res Labs, Shiga 5200833, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 09期

关键词：

FET; field-modulating plate; high-power amplifier; high-voltage operation; pulsed RF; WCDMA;

D O I：

10.1109/TED.2003.815577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel GaAs power FET with a field-modulating plate (FP-FET) and operated at a drain bias voltage of 24 V was developed. Regarding the power performance of an FP-FET under wideband code division multiple access (WCDMA) operation, its peak output power significantly degraded in the saturated-output-power region when its FP length was short. However, by introducing a sufficiently large FP length, it was demonstrated that the peak-power degradation can be significantly suppressed. In particular, an FP-FET amplifier fabricated with an FP length of 1.5 mum exhibited no WCDMA peak-power degradation and delivered an output power of 120 W with a linear gain of 14.2 dB at 2.14 GHz.

引用

页码：1983 / 1987

页数：5

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