A complex heterostructure to achieve a single-crystalline MgO film on GaAs (001)

被引：11

作者：

Saiki, K ^{[1
]}

Nishita, K ^{[1
]}

Koma, A ^{[1
]}

机构：

[1] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 12A期

关键词：

MgO; GaAs; epitaxy; heterostructure; RHEED; EELS;

D O I：

10.1143/JJAP.37.L1427

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-crystalline MgO film was grown on GaAs(001) by constructing a complex heterostructure with two alkali halide buffer layers. The growth temperature was decreased to 150 degrees C as compared with direct growth of MgO on GaAs(001). Electron energy loss spectrum of the grown film agreed well with that of bulk MgO, indicating that surface stoichiometry was maintained. The structure was stable up to 600 degrees C against heating in UHV condition. The concept of a complex heterostructure will help fabrication of functional oxide layers on GaAs substrates and lead to oxide/semiconductor integrated devices.

引用

收藏

页码：L1427 / L1429

页数：3

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