NANOSTRUCTURE AND CHEMISTRY OF A (100)MGO/(100)GAAS INTERFACE

被引：12

作者：

BRULEY, J

STEMMER, S

ERNST, F

RUHLE, M

HSU, WY

RAJ, R

机构：

[1] MAX PLANCK INST METALLFORSCH,INST WERKSTOFFWISSENS,D-70174 STUTTGART,GERMANY

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube-on-cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM-energy dispersive x-ray and scanning TEM-electron energy loss spectroscopy analysis of the interlayer shows that it consists of the native oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.

引用

收藏

页码：564 / 566

页数：3

相关论文

共 9 条

[1] EPITAXIAL MGO BUFFER LAYERS FOR YBA2CU3O7-X THIN-FILM ON GAAS [J].

CHANG, LD ;

TSENG, MZ ;

HU, EL ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1992, 60 (14) :1753-1755

[2] EPITAXIAL YBA2CU3O7-DELTA ON GAAS(001) USING BUFFER LAYERS [J].

FORK, DK ;

NASHIMOTO, K ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1992, 60 (13) :1621-1623

[3] MGO EPITAXIAL THIN-FILMS ON (100) GAAS AS A SUBSTRATE FOR THE GROWTH OF ORIENTED PBTIO3 [J].

HSU, WY ;

RAJ, R .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3105-3107

[4] EPITAXIAL-GROWTH OF MGO ON (100)GAAS USING ULTRAHIGH-VACUUM ELECTRON-BEAM EVAPORATION [J].

HUNG, LS ;

ZHENG, LR ;

BLANTON, TN .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3129-3131

[5]

Kubaschewski O., 1967, METALLURGICAL THERMO

[6] EPITAXIAL-GROWTH OF MGO ON GAAS(001) FOR GROWING EPITAXIAL BATIO3 THIN-FILMS BY PULSED LASER DEPOSITION [J].

NASHIMOTO, K ;

FORK, DK ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1992, 60 (10) :1199-1201

[7] GROWTH AND CHARACTERIZATION OF (111) AND (001) ORIENTED MGO FILMS ON (001) GAAS [J].

TARSA, EJ ;

DEGRAEF, M ;

CLARKE, DR ;

GOSSARD, AC ;

SPECK, JS .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3276-3283

[8] EPITAXIAL-GROWTH OF NBN ON AN ULTRATHIN MGO SEMICONDUCTOR SYSTEM [J].

TONOUCHI, M ;

SAKAGUCHI, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :961-966

[9] TEMPERATURE-DEPENDENT MOBILITY OF A GAAS/ALGAAS HETEROSTRUCTURE AFTER DEPOSITION OF MGO AND SUPERCONDUCTING YBA2CU3O7-X [J].

TSENG, MZ ;

NGUYEN, C ;

TARSA, E ;

CHANG, LD ;

HU, EL ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1992, 61 (05) :601-603