Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

被引：165

作者：

David, Aurelien ^{[1
]}

Grundmann, Michael J. ^{[1
]}

机构：

[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

carrier lifetime; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors;

D O I：

10.1063/1.3462916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study differential carrier lifetimes in InGaN light-emitting diodes (LEDs) of varying wavelengths. Increase in wavelength is correlated with an increase in lifetime, due to the impact of the polarization fields on carrier overlap. This effect explains the early onset of droop in longer-wavelength LEDs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3462916]

引用

页数：3

共 10 条

[1] BERNARDINI F, 2007, NITRIDE SEMICONDUCTO, pCH3
[2] DAVID A, UNPUB
[3] Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
David, Aurelien
Grundmann, Michael J.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (10)
[4] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes
David, Aurelien
Grundmann, Michael J.
Kaeding, John F.
Gardner, Nathan F.
Mihopoulos, Theodoros G.
Krames, Michael R.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (05)
[5] Polarization fields of III-nitrides grown in different crystal orientations
Feneberg, M.
Thonke, K.
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (40)
[6] Hader J., 2007, NITRIDE SEMICONDUCTO
[7] Defect related issues in the "current roll-off" in InGaN based light emitting diodes
Monemar, B.
Sernelius, B. E.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (18)
[8] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes
Mukai, T
Yamada, M
Nakamura, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A): : 3976 - 3981
[9] Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
Schubert, Martin F.
Xu, Jiuru
Kim, Jong Kyu
Schubert, E. Fred
Kim, Min Ho
Yoon, Sukho
Lee, Soo Min
Sone, Cheolsoo
Sakong, Tan
Park, Yongjo
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (04)
[10] First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local and gradient-corrected density-functional theory
Zoroddu, A
Bernardini, F
Ruggerone, P
Fiorentini, V
[J]. PHYSICAL REVIEW B, 2001, 64 (04):

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