Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

被引：405

作者：

Schubert, Martin F. ^{[1
]}

Xu, Jiuru ^{[1
]}

Kim, Jong Kyu ^{[1
]}

Schubert, E. Fred ^{[1
]}

Kim, Min Ho ^{[1
,2
]}

Yoon, Sukho ^{[2
]}

Lee, Soo Min ^{[2
]}

Sone, Cheolsoo ^{[2
]}

Sakong, Tan ^{[2
]}

Park, Yongjo ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Future Chips Constellat, Troy, NY 12180 USA

[2] Samsung Electromech, Cent R&D Inst, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.2963029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents-an effect known as the efficiency droop. The GaInN/AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN/GaN LEDs. (c) 2008 American Institute of Physics.

引用

页数：3

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