Growth and evaluation of Cd1-yZnyTe epilayers on (100) GaAs substrates by hot wall epitaxy

Growth of Cd1-yZnyTe (CZT) on (100) GaAs by hot wall epitaxy (HWE) is reported for the first time. Nearly stoichiometric CZT epilayers of high quality with y approximate to 0.045 are grown using y = 0.2 source and Cd reservoir. Under determined optimum growth conditions, the relationship between quality and thickness of CZT epilayers is compared with that of CdTe epilayers. In the case of layers thicker than 4 mu m, a broader full width at half maximum (FWHM) is observed for CZT epilayers than for CdTe epilayers. Also, the deep-level emission in 4.2 K photoluminescence does remains up to 12.8 mu m These results are thought to be due to structural defects that originate from phase separation. The X-ray FWHM values of 150-180 arcsec are obtained at thicknesses greater than 12 mu m and are comparable to those obtained by another epitaxial method.