Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

被引：38

作者：

Huh, Y

Lee, JY ^{[1
]}

Lee, JH

Lee, TJ

Lyu, SC

Lee, CJ

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] ETRI, Next Semicond Res Dev, Basic Res Lab, Taejon 305350, South Korea

[3] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 375卷 / 3-4期

关键词：

D O I：

10.1016/S0009-2614(03)00869-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 muA at the applied gate voltage of 100 V. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：388 / 392

页数：5

共 29 条

[11] Operation of individual integrally gated carbon nanotube field emitter cells [J].