Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

被引：102

作者：

Shashkin, AA ^{[1
]}

Rahimi, M

Anissimova, S

Kravchenko, SV

Dolgopolov, VT

Klapwijk, TM

机构：

[1] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[3] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.91.046403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We accurately measure the effective mass in a dilute two-dimensional electron system in silicon by analyzing the temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective mass with decreasing electron density is observed. We find that the enhanced effective mass is independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement and is in contradiction with existing theories.

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页数：4

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