Organic-inorganic semiconductor devices and 3, 4, 9, 10 perylenetetracarboxylic dianhydride: an early history of organic electronics

被引:53
作者
Forrest, SR [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA
关键词
D O I
10.1088/0953-8984/15/38/001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The demonstration, over 20 years ago, of an organic-inorganic heterojunction (OI HJ) device along with investigations of the growth and physical properties of the archetypal crystalline molecular organic semiconductor 3, 4, 9, 10 perylenetetracarboxylic dianhydride are discussed. Possible applications of OI HJ devices are introduced and the dramatic change in conductive properties of these materials when exposed to high-energy ion beams is described. The past and future prospects for hybrid organic-on-inorganic semiconductor structures for use in electronic and photonic applications are also presented.
引用
收藏
页码:S2599 / S2610
页数:12
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