Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si(001) -: art. no. 201901

被引：62

作者：

Sivasubramani, P

Kim, MJ

Gnade, BE

Wallace, RM ^{[1
]}

Edge, LF

Schlom, DG

Craft, HS

Maria, JP

机构：

[1] Univ Texas, Dept Elect Engn & Phys, Richardson, TX 75080 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期

关键词：

D O I：

10.1063/1.1928316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 degrees C for 20 s, in flowing N-2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 degrees C for 20 s in flowing N-2. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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