Symmetry-dependent phonon renormalization in monolayer MoS2 transistor

被引：935

作者：

Chakraborty, Biswanath ^{[1
]}

Bera, Achintya ^{[1
]}

Muthu, D. V. S. ^{[1
]}

Bhowmick, Somnath ^{[2
]}

Waghmare, U. V. ^{[2
]}

Sood, A. K. ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 16期

关键词：

GRAPHENE;

D O I：

10.1103/PhysRevB.85.161403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A strong electron-phonon interaction which limits the electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in situ Raman scattering from a single-layer MoS2 electrochemically top-gated field-effect transistor (FET), we show softening and broadening of the A(1g) phonon with electron doping, whereas the other Raman-active E-2g(1) mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why the A(1g) mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single-layer MoS2-based FETs, which have a high on-off ratio and are of technological significance.

引用

页数：4

共 28 条

[21] Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene [J].

Panchokarla, L. S. ;

Subrahmanyam, K. S. ;

Saha, S. K. ;

Govindaraj, Achutharao ;

Krishnamurthy, H. R. ;

Waghmare, U. V. ;

Rao, C. N. R. .

ADVANCED MATERIALS, 2009, 21 (46) :4726-+

[22] SELF-INTERACTION CORRECTION TO DENSITY-FUNCTIONAL APPROXIMATIONS FOR MANY-ELECTRON SYSTEMS [J].

PERDEW, JP ;

ZUNGER, A .

PHYSICAL REVIEW B, 1981, 23 (10) :5048-5079

[23] Breakdown of the adiabatic Born-Oppenheimer approximation in graphene [J].

Pisana, Simone ;

Lazzeri, Michele ;

Casiraghi, Cinzia ;

Novoselov, Kostya S. ;

Geim, A. K. ;

Ferrari, Andrea C. ;

Mauri, Francesco .

NATURE MATERIALS, 2007, 6 (03) :198-201

[24] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

[25] OPTIMIZED PSEUDOPOTENTIALS [J].

RAPPE, AM ;

RABE, KM ;

KAXIRAS, E ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1990, 41 (02) :1227-1230

[26] Emerging Photoluminescence in Monolayer MoS2 [J].

Splendiani, Andrea ;

Sun, Liang ;

Zhang, Yuanbo ;

Li, Tianshu ;

Kim, Jonghwan ;

Chim, Chi-Yung ;

Galli, Giulia ;

Wang, Feng .

NANO LETTERS, 2010, 10 (04) :1271-1275

[27] Electric field effect tuning of electron-phonon coupling in graphene [J].

Yan, Jun ;

Zhang, Yuanbo ;

Kim, Philip ;

Pinczuk, Aron .

PHYSICAL REVIEW LETTERS, 2007, 98 (16)

[28] Observation of anomalous phonon softening in bilayer graphene [J].

Yan, Jun ;

Henriksen, Erik A. ;

Kim, Philip ;

Pinczuk, Aron .

PHYSICAL REVIEW LETTERS, 2008, 101 (13)

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