Nanoscale charging hysteresis measurement by multifrequency electrostatic force spectroscopy

被引:16
作者
Bostanci, Umut [1 ]
Abak, M. Kurtulus [2 ]
Aktas, O. [2 ]
Dana, A. [2 ]
机构
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
[2] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
关键词
D O I
10.1063/1.2888765
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a scanning probe technique that can be used to measure charging of localized states on conducting or partially insulating substrates at room temperature under ambient conditions. Electrostatic interactions in the presence of a charged particle between the tip and the sample is monitored by the second order flexural mode, while the fundamental mode is used for stabilizing the tip-sample separation. Cycling the bias voltage between two limits, it is possible to observe hysteresis of the second order mode amplitude due to charging. Results are presented on silicon nitride films containing silicon nanocrystals. (c) 2008 American Institute of Physics.
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页数:3
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共 14 条
[11]   Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopy [J].
Schaadt, DM ;
Yu, ET ;
Sankar, S ;
Berkowitz, AE .
APPLIED PHYSICS LETTERS, 1999, 74 (03) :472-474
[12]   Label-free and high-resolution protein/DNA nanoarray analysis using Kelvin probe force microscopy [J].
Sinensky, Asher K. ;
Belcher, Angela M. .
NATURE NANOTECHNOLOGY, 2007, 2 (10) :653-659
[13]   Fourier transformed atomic force microscopy: tapping mode atomic force microscopy beyond the Hookian approximation [J].
Stark, RW ;
Heckl, WM .
SURFACE SCIENCE, 2000, 457 (1-2) :219-228
[14]   Compensating electrostatic forces by single-scan Kelvin probe force microscopy [J].
Ziegler, Dominik ;
Rychen, Joerg ;
Naujoks, Nicola ;
Stemmer, Andreas .
NANOTECHNOLOGY, 2007, 18 (22)