Non-destructive and quantitative imaging of a nano-structured microchip by ptychographic hard X-ray scanning microscopy

被引：42

作者：

Schropp, A. ^{[1
]}

Boye, P. ^{[1
]}

Goldschmidt, A. ^{[1
]}

Hoenig, S. ^{[1
]}

Hoppe, R. ^{[1
]}

Patommel, J. ^{[1
]}

Rakete, C. ^{[1
]}

Samberg, D. ^{[1
]}

Stephan, S. ^{[1
]}

Schoeder, S. ^{[2
]}

Burghammer, M. ^{[2
]}

Schroer, C. G. ^{[1
]}

机构：

[1] Tech Univ Dresden, Inst Struct Phys, D-01062 Dresden, Germany

[2] European Synchrotron Radiat Facil ESRF, Grenoble, France

来源：

JOURNAL OF MICROSCOPY | 2011年 / 241卷 / 01期

关键词：

Hard X-ray microscopy; microelectronics; nondestructive imaging; ptychography; PHASE RETRIEVAL;

D O I：

10.1111/j.1365-2818.2010.03453.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

P>We used hard X-ray scanning microscopy with ptychographic coherent diffraction contrast to image a front-end processed passivated microchip fabricated in 80 nm technology. No sample preparation was needed to image buried interconnects and contact layers with a spatial resolution of slightly better than 40 nm. The phase shift in the sample is obtained quantitatively. With the additional knowledge of the elemental composition determined in parallel by X-ray fluorescence mapping, quantitative information about specific nanostructures is obtained. A significant enhancement in signal-to-noise ratio and spatial resolution is achieved compared to conventional hard X-ray scanning microscopy.

引用

页码：9 / 12

页数：4

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