Correlating structural and resistive changes in Ti:NiO resistive memory elements

被引：18

作者：

Heinonen, O. ^{[1
]}

Siegert, M. ^{[1
]}

Roelofs, A. ^{[1
]}

Petford-Long, A. K. ^{[2
]}

Holt, M. ^{[3
]}

d'Aquila, K. ^{[2
,4
]}

Li, W. ^{[2
]}

机构：

[1] Seagate Technol, Memory Prod Grp, Bloomington, MN 55435 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

RANDOM-ACCESS MEMORY; TRANSITION-METAL OXIDES; NIO FILMS; RESISTANCE;

D O I：

10.1063/1.3355546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3355546]

引用

页数：3

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