Lowering the switching current of resistance random access memory using a hetero junction structure consisting of transition metal oxides

被引：65

作者：

Kinoshita, Kentaro ^{[1
]}

Tamura, Tetsuro ^{[1
]}

Aoki, Masaki ^{[1
]}

Sugiyama, Yoshihiro ^{[1
]}

Tanaka, Hitoshi ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 37-41期

关键词：

ReRAM; NiO; TiO2; forming; reset;

D O I：

10.1143/JJAP.45.L991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both lowering the "reset" current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in "forming" process. Reducing the number of filaments is essential to these issues.

引用

页码：L991 / L994

页数：4

共 13 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].