Solution-Processed Molecular Bis(Naphthalene Diimide) Derivatives with High Electron Mobility

被引：106

作者：

Polander, Lauren E. ^{[2
,3
]}

Tiwari, Shree P. ^{[1
,3
]}

Pandey, Laxman ^{[2
,3
]}

Seifried, Brian M. ^{[2
,3
]}

Zhang, Qing ^{[2
,3
]}

Barlow, Stephen ^{[2
,3
]}

Risko, Chad ^{[2
,3
]}

Bredas, Jean-Luc ^{[2
,3
]}

Kippelen, Bernard ^{[1
,3
]}

Marder, Seth R. ^{[2
,3
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

来源：

CHEMISTRY OF MATERIALS | 2011年 / 23卷 / 15期

基金：

美国国家科学基金会;

关键词：

electronic materials; organic semiconductors; naphthalene diimide; HIGH-PERFORMANCE; SEMICONDUCTORS; TRANSISTORS; POLYMER;

D O I：

10.1021/cm201729s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1. © 2011 American Chemical Society.

引用

收藏

页码：3408 / 3410

页数：3

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