Photoluminescence and photoconductance in annealed ZnO thin films

被引：53

作者：

Ghosh, R

Mallik, B

Fujihara, S

Basak, D ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India

[2] Indian Assoc Cultivat Sci, Dept Spect, Kolkata 700032, W Bengal, India

[3] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 403卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2005.01.043

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sol-gel ZnO films have been annealed at 500 degreesC under different ambients for optimization of the complete growth process and characterized. X-ray diffraction results show that annealed films have similar structural qualities. Photoluminescence studies show that the visible emission is enhanced when annealed in vacuum and nitrogen, the effect is discussed in relation to the radiative transitions related to the trapped charge carriers. The dark I-V characteristics show that the current increases in vacuum and nitrogen annealed films and decreases for the film annealed in air. The UV Photoresponse of the ZnO films was affected by the annealing ambience. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：415 / 419

页数：5

共 27 条

[1] Strong ultraviolet and green emissions at room temperature from annealed ZnO thin films [J].