Stacking faults in pseudomorphic ZnSe-GaAs and lattice-matched ZnSe-In0.04Ga0.96As layers

被引：12

作者：

Bonard, JM

Ganiere, JD

Heun, S

Paggel, JJ

Rubini, S

Sorba, L

Franciosi, A

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND

[2] INFM,TASC,LAB NAZL,I-34012 TRIESTE,ITALY

[3] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

[4] CNR,INST ICMAT,ROME,ITALY

[5] UNIV TRIESTE,DIPARTMENTO FIS,I-34127 TRIESTE,ITALY

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1997年 / 75卷 / 04期

关键词：

D O I：

10.1080/095008397179642

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04Ga0.96As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111) and <((11)over bar 1)> fault planes and single Frank stacking faults lying on <((1)over bar 11)> or <(1(1)over bar 1)> fault planes by comparing experimental images with the predictions obtained with the g.b = 0 rule as well as with simulated images.

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页码：219 / 226

页数：8

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