Ultrafast carrier trapping in high energy ion implanted gallium arsenide

被引：26

作者：

Jagadish, C

Tan, HH

Krotkus, A

Marcinkevicius, S

Korona, KP

Kaminska, M

机构：

[1] INST SEMICOND PHYS,VILNIUS 2600,LITHUANIA

[2] ROYAL INST TECHNOL,DEPT PHYS 2,S-10044 STOCKHOLM,SWEDEN

[3] UNIV WARSAW,INST EXPTL PHYS,PL-00681 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.115866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time resolved photoluminescence and electrical measurements were made on MeV As, Ga, Si, and O ion implanted GaAs to doses in the range of 1 x 10(14)-5 x 10(16) cm (-2) and subsequently annealed at 600 degrees C for 20 min under arsine ambient. Carrier trapping times were found to decrease with increase in implantation dose for all species studied and can be shorter than 1 ps. Sheet resistance values were found to be independent of implantation dose and were of the order of 10(8) Ohm/square for As, Ga, and O implantation and similar to 2x10(2) Ohm/square for the Si case due to its electrical activation. Conductivity activation energies of 0.67-0.69 eV were observed for As, Ga, and O ion implanted and annealed GaAs, which are close to the reported activation energy for annealed low-temperature GaAs (0.65 eV). (C) 1996 American Institute of Physics.

引用

页码：2225 / 2227

页数：3

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