DAMAGE CALCULATION AND MEASUREMENT FOR GAAS AMORPHIZED BY SI IMPLANTATION

被引：38

作者：

OPYD, WG

GIBBONS, JF

BRAVMAN, JC

PARKER, MA

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] STANFORD UNIV,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：974 / 976

页数：3

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