ARGON IMPLANTATION IN GAAS - DAMAGE AND LATTICE SITE LOCATION ANALYSES

被引：12

作者：

RAI, AK

BHATTACHARYA, RS

PRONKO, PP

LING, SC

机构：

[1] WRIGHT STATE UNIV,DAYTON,OH 45435

[2] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2307 / 2311

页数：5

共 12 条

[1] NUCLEATION OF ATOMIC STEPS ON INERT-GAS BUBBLES INTERSECTED BY DISLOCATIONS
BEERE, WB
[J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (01): : 189 - &
[2] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS
BHATTACHARYA, RS
PRONKO, PP
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 890 - 892
[3] FLUENCE DEPENDENCE OF DISPLACEMENT DAMAGE, RESIDUAL DEFECTS, AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE-ANNEALED SE-+-IMPLANTED GAAS
BHATTACHARYA, RS
PRONKO, PP
YEO, YK
RAI, AK
PARK, YS
NARAYAN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4821 - 4825
[4] BHATTACHARYA RS, 1983, INT J PHYS CHEM SOLI, V44, P61
[5] BHATTACHARYA RS, 1982, J APPL PHYS, V53, P1803
[6] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON
CULLIS, AG
SEIDEL, TE
MEEK, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5188 - 5198
[7] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS
GRIMALDI, MG
PAINE, BM
NICOLET, MA
SADANA, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4038 - 4046
[8] SI-28 IMPLANTATION INTO AR-40 IMPLANT-PRETREATED SEMI-INSULATING GAAS SUBSTRATES - MOBILITY AND ACTIVATION EFFICIENCY ENHANCEMENT
LIU, SG
NARAYAN, SY
MAGEE, CW
WU, CP
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 72 - 75
[9] MIGRATION OF INERT GASES IN IONIC CRYSTALS
NORGETT, MJ
LIDIARD, AB
[J]. PHILOSOPHICAL MAGAZINE, 1968, 18 (156): : 1193 - &
[10] ELECTRON MICROSCOPY AND DIFFRACTION OF TWINNED STRUCTURES IN EVAPORATED FILMS OF GOLD
PASHLEY, DW
STOWELL, MJ
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (94): : 1605 - &

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