HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SE+-IMPLANTED AND ANNEALED GAAS - MECHANISMS OF AMORPHIZATION AND RECRYSTALLIZATION

被引：43

作者：

SADANA, DK ^{[1
]}

SANDS, T ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1063/1.94856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：623 / 625

页数：3

共 11 条

[1] DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS
BHATTACHARYA, RS
RAI, AK
PRONOKO, PP
NARAYAN, J
LING, SC
WILSON, SR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (01) : 61 - 69
[2] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
GAMO, K
INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[3] GRIMALDI MG, 1982, J APPL PHYS, V53, P1803
[4] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS
KULAR, SS
SEALY, BJ
STEPHENS, KG
SADANA, D
BOOKER, GR
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 831 - &
[5] KULAR SS, 1977, ELECTRON LETT, V14, P22
[6] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDE
NARAYANAN, GH
KACHARE, AH
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669
[7] CORRELATION BETWEEN STRUCTURAL AND ELECTRICAL PROFILES IN ION-IMPLANTED GAAS
SADANA, DK
BOOKER, GR
SEALY, BJ
STEPHENS, KG
BADAWI, MH
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 183 - 186
[8] SADANA DK, 1979, RADIAT EFF, V2, P35
[9] SANDS T, UNPUB
[10] THE CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN SILICON
WASHBURN, J
MURTY, CS
SADANA, D
BYRNE, P
GRONSKY, R
CHEUNG, N
KILAAS, R
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 345 - 350