Role of hydrogen for microcrystalline silicon formation

被引：6

作者：

Saitoh, K ^{[1
]}

Kondo, M ^{[1
]}

Fukawa, M ^{[1
]}

Nishimiya, T ^{[1
]}

Futako, W ^{[1
]}

Shimizu, I ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] TFSSC Superlab, Electrotech Lab, Tsukuba, Ibaraki, Japan

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-843

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of hydrogen atoms in the formation process of hydrogenated microcrystalline silicon (mu c-Si:H) by plasma enhanced chemical vapor deposition method has been investigated. Under the present conditions, the etching and the permeation of hydrogen atoms in the subsurface region do not cause the crystallization. The kinetics study of surface morphology and structure in the initial growth of mu c-Si:H on an atomically flat substrate indicates that the onset thickness of island coalescence reduced under mu c-Si:H formation condition. The results support the 'surface diffusion model' in which the surface diffusion of film precursors is enhanced by the sufficient hydrogen coverage of surface and by hydrogen atom recombination energy on the growing surface of the film.

引用

页码：843 / 853

页数：11

共 15 条

[1] PREPARATION OF HIGHLY PHOTOCONDUCTIVE HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS WITH A MULTIPLASMA-ZONE APPARATUS [J].

ASANO, A ;

ICHIMURA, T ;

SAKAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2439-2444

[2] EFFECTS OF HYDROGEN-ATOMS ON THE NETWORK STRUCTURE OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS [J].

ASANO, A .

APPLIED PHYSICS LETTERS, 1990, 56 (06) :533-535

[3] CHARACTERIZATION OF A WO3 THIN-FILMS BEFORE AND AFTER COLORATION [J].

GERARD, P ;

DENEUVILLE, A ;

COURTHS, R .

THIN SOLID FILMS, 1980, 71 (02) :221-236

[4] Surface roughening during low temperature Si(100) epitaxy [J].

Karpenko, OP ;

Yalisove, SM ;

Eaglesham, DJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :1157-1165

[5] Correlation between surface morphology and lattice orientation of microcrystalline silicon [J].

Kondo, M ;

Nishimiya, T ;

Saitoh, K ;

Ohe, T ;

Matsuda, A .

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 :391-396

[6] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[7]

Matsuda A, 1989, MATER RES SOC S P, V164, P3

[8] On the way towards high efficiency thin film silicon solar cells by the ''micromorph'' concept [J].

Meier, J ;

Torres, P ;

Platz, R ;

Dubail, S ;

Kroll, U ;

Selvan, JAA ;

Vaucher, NP ;

Hof, C ;

Fischer, D ;

Keppner, H ;

Shah, A ;

Ufert, KD ;

Giannoules, P ;

Koehler, J .

AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 :3-14

[9] ROLES OF ATOMIC-HYDROGEN IN CHEMICAL ANNEALING [J].

NAKAMURA, K ;

YOSHINO, K ;

TAKEOKA, S ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2A) :442-449

[10] PREPARATION OF ULTRATHIN MICROCRYSTALLINE SILICON LAYERS BY ATOMIC-HYDROGEN ETCHING OF AMORPHOUS-SILICON AND END-POINT DETECTION BY REALTIME SPECTROELLIPSOMETRY [J].

NGUYEN, HV ;

AN, I ;

COLLINS, RW ;

LU, YW ;

WAKAGI, M ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1994, 65 (26) :3335-3337

← 1 2 →