High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity

被引：78

作者：

Cao, Yang ^{[1
]}

Wei, Zhongming ^{[2
]}

Liu, Song ^{[1
]}

Gan, Lin ^{[1
]}

Guo, Xuefeng ^{[1
]}

Xu, Wei ^{[2
]}

Steigerwald, Michael L. ^{[3
,4
]}

Liu, Zhongfan ^{[1
]}

Zhu, Daoben ^{[2
]}

机构：

[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 00190, Peoples R China

[3] Columbia Univ, Dept Chem, New York, NY 10027 USA

[4] Columbia Univ, Energy Frontiers Res Ctr, New York, NY 10027 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2010年 / 49卷 / 36期

关键词：

field-effect transistors; graphene; molecular devices; monolayers; photoresponsivity; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; CONDUCTING POLYMER; PATTERNED GRAPHENE; CARBON NANOTUBES; ELECTRODES; SEMICONDUCTORS; PHOTOCURRENT; TRANSPARENT;

D O I：

10.1002/anie.201001683

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Molecular field-effect transistors with bulk-like carrier mobility (as high as 0.04 cm2 V-1 s-1), high on/off current ratios (over 106), and high responsivity are formed by the integration of Langmuir-Blodgett techniques with sophisticated micro/nanofabrication. The transistors are formed from self-assembled uniform monolayers of copper phthalocyanine (CuPc) semiconductors and single-layer graphene as planar contacts. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：6319 / 6323

页数：5

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