High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity

被引:78
作者
Cao, Yang [1 ]
Wei, Zhongming [2 ]
Liu, Song [1 ]
Gan, Lin [1 ]
Guo, Xuefeng [1 ]
Xu, Wei [2 ]
Steigerwald, Michael L. [3 ,4 ]
Liu, Zhongfan [1 ]
Zhu, Daoben [2 ]
机构
[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 00190, Peoples R China
[3] Columbia Univ, Dept Chem, New York, NY 10027 USA
[4] Columbia Univ, Energy Frontiers Res Ctr, New York, NY 10027 USA
关键词
field-effect transistors; graphene; molecular devices; monolayers; photoresponsivity; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; CONDUCTING POLYMER; PATTERNED GRAPHENE; CARBON NANOTUBES; ELECTRODES; SEMICONDUCTORS; PHOTOCURRENT; TRANSPARENT;
D O I
10.1002/anie.201001683
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molecular field-effect transistors with bulk-like carrier mobility (as high as 0.04 cm2 V-1 s-1), high on/off current ratios (over 106), and high responsivity are formed by the integration of Langmuir-Blodgett techniques with sophisticated micro/nanofabrication. The transistors are formed from self-assembled uniform monolayers of copper phthalocyanine (CuPc) semiconductors and single-layer graphene as planar contacts. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:6319 / 6323
页数:5
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